onsemi NXH40B120MNQ1SNG IGBT Module Q1 3-Channel BOOST - Case 180BQ Solder Pins (Pb Free)
- RS stock no.:
- 245-6984
- Mfr. Part No.:
- NXH40B120MNQ1SNG
- Manufacturer:
- onsemi
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Bulk discount available
Subtotal (1 unit)*
R 1 479,84
(exc. VAT)
R 1 701,82
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 21 unit(s), ready to ship from another location
Units | Per unit |
|---|---|
| 1 - 2 | R 1,479.84 |
| 3 - 5 | R 1,442.84 |
| 6 - 8 | R 1,399.55 |
| 9 - 11 | R 1,343.57 |
| 12 + | R 1,289.83 |
*price indicative
- RS stock no.:
- 245-6984
- Mfr. Part No.:
- NXH40B120MNQ1SNG
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Power Dissipation | 156 W | |
| Number of Transistors | 3 | |
| Package Type | Q1 3-Channel BOOST - Case 180BQ Solder Pins (Pb Free) | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Power Dissipation 156 W | ||
Number of Transistors 3 | ||
Package Type Q1 3-Channel BOOST - Case 180BQ Solder Pins (Pb Free) | ||
Full SiC MOSFET Module | EliteSiC Three Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode Nickel-plated DBC
The ON Semiconductor NXH40B120MNQ1SNG is a power module containing a three channel boost stage. The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.
40 m/1200 V SiC MOSFET Half−Bridge
Thermistor
Options with Pre Applied Thermal Interface Material and without Pre Applied TIM
Press Fit Pins
These Devices are Pb Free, Halide Free and are RoHS Compliant
Thermistor
Options with Pre Applied Thermal Interface Material and without Pre Applied TIM
Press Fit Pins
These Devices are Pb Free, Halide Free and are RoHS Compliant
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