STMicroelectronics STGWA30IH160DF2, Type N-Channel IGBT, 85 A 1600 V, 3-Pin TO-247, Through Hole
- RS stock no.:
- 468-506
- Mfr. Part No.:
- STGWA30IH160DF2
- Manufacturer:
- STMicroelectronics
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Subtotal (1 tube of 30 units)*
R 1 129,71
(exc. VAT)
R 1 299,18
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 450 unit(s) shipping from 16 March 2026
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Units | Per unit | Per Tube* |
|---|---|---|
| 30 + | R 37.657 | R 1,129.71 |
*price indicative
- RS stock no.:
- 468-506
- Mfr. Part No.:
- STGWA30IH160DF2
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 85A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1600V | |
| Maximum Power Dissipation Pd | 395W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 331ns | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 20.1mm | |
| Width | 15.9 mm | |
| Series | IH2 | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current Ic 85A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1600V | ||
Maximum Power Dissipation Pd 395W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 331ns | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 20.1mm | ||
Width 15.9 mm | ||
Series IH2 | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics IGBT has been developed using an Advanced proprietary trench gate field-stop structure, whose performance is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop forward voltage is included. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching applications.
Minimized tail current
Tight parameter distribution
Low thermal resistance
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