Infineon IKB40N65ES5ATMA1 IGBT, 79 A 650 V, 3-Pin PG-TO263-3

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Subtotal (1 pack of 2 units)*

R 137,38

(exc. VAT)

R 157,98

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 68.69R 137.38
10 - 98R 66.975R 133.95
100 - 248R 64.965R 129.93
250 - 498R 62.365R 124.73
500 +R 59.87R 119.74

*price indicative

Packaging Options:
RS stock no.:
215-6655
Mfr. Part No.:
IKB40N65ES5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

79 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20 V, ±30 V

Maximum Power Dissipation

230 W

Package Type

PG-TO263-3

Pin Count

3

The Infineon high speed switching series fifth generation insulated-gate bipolar transistor.

High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference

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