Infineon IKB40N65ES5ATMA1 IGBT, 79 A 650 V, 3-Pin PG-TO263-3
- RS stock no.:
- 215-6655
- Mfr. Part No.:
- IKB40N65ES5ATMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
R 156,14
(exc. VAT)
R 179,56
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 4,276 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 78.07 | R 156.14 |
| 10 - 98 | R 76.12 | R 152.24 |
| 100 - 248 | R 73.835 | R 147.67 |
| 250 - 498 | R 70.88 | R 141.76 |
| 500 + | R 68.045 | R 136.09 |
*price indicative
- RS stock no.:
- 215-6655
- Mfr. Part No.:
- IKB40N65ES5ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 79 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20 V, ±30 V | |
| Maximum Power Dissipation | 230 W | |
| Package Type | PG-TO263-3 | |
| Pin Count | 3 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 79 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20 V, ±30 V | ||
Maximum Power Dissipation 230 W | ||
Package Type PG-TO263-3 | ||
Pin Count 3 | ||
The Infineon high speed switching series fifth generation insulated-gate bipolar transistor.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
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