Infineon IKB40N65EF5ATMA1 IGBT, 74 A 650 V, 3-Pin PG-TO263-3

Bulk discount available

Subtotal (1 reel of 1000 units)*

R 37 037,00

(exc. VAT)

R 42 593,00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 28 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
1000 - 1000R 37.037R 37,037.00
2000 - 2000R 36.111R 36,111.00
3000 +R 35.028R 35,028.00

*price indicative

RS stock no.:
215-6649
Mfr. Part No.:
IKB40N65EF5ATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Maximum Continuous Collector Current

74 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20 V, ±30 V

Maximum Power Dissipation

250 W

Package Type

PG-TO263-3

Pin Count

3

The Infineon high speed fast switching insulated-gate bipolar transistor with full current rated rapid 1 fast and soft antiparallel diode.

High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference

Related links