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Infineon IKB15N65EH5ATMA1 IGBT, 30 A 650 V, 3-Pin PG-TO263-3

RS stock no.:: 215-6648
Mfr. Part No.:: IKB15N65EH5ATMA1
Manufacturer:: Infineon

Infineon IKB15N65EH5ATMA1 IGBT, 30 A 650 V, 3-Pin PG-TO263-3

Bulk discount available

Subtotal (1 pack of 5 units)*

R 342,04

(exc. VAT)

R 393,345

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

Plus 920 unit(s) shipping from 01 January 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 5	R 68.408	R 342.04
10 - 95	R 66.698	R 333.49
100 - 245	R 64.698	R 323.49
250 - 495	R 62.11	R 310.55
500 +	R 59.626	R 298.13

*price indicative

RS stock no.:: 215-6648
Mfr. Part No.:: IKB15N65EH5ATMA1
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Maximum Continuous Collector Current	30 A
	Maximum Collector Emitter Voltage	650 V
	Maximum Gate Emitter Voltage	±20 V, ±30 V
	Maximum Power Dissipation	105 W
	Package Type	PG-TO263-3
	Pin Count	3

	Select all
	Brand Infineon
	Maximum Continuous Collector Current 30 A
	Maximum Collector Emitter Voltage 650 V
	Maximum Gate Emitter Voltage ±20 V, ±30 V
	Maximum Power Dissipation 105 W
	Package Type PG-TO263-3
	Pin Count 3

Datasheet-IKB15N65EH5ATMA1

The Infineon high speed switching insulated-gate bipolar transistor copacked with full rated current rapid 1 antiparallel diode also has 650v breakdown voltage.

High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference

Infineon IKB15N65EH5ATMA1 IGBT, 30 A 650 V, 3-Pin PG-TO263-3

FREE delivery for orders over R 1,500.00

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