Infineon IKB15N65EH5ATMA1, Type N-Channel IGBT Single Transistor IC, 30 A 650 V, 3-Pin TO-263, Surface
- RS stock no.:
- 215-6648
- Mfr. Part No.:
- IKB15N65EH5ATMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 255,26
(exc. VAT)
R 293,55
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 920 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 51.052 | R 255.26 |
| 10 - 95 | R 49.776 | R 248.88 |
| 100 - 245 | R 48.282 | R 241.41 |
| 250 - 495 | R 46.35 | R 231.75 |
| 500 + | R 44.496 | R 222.48 |
*price indicative
- RS stock no.:
- 215-6648
- Mfr. Part No.:
- IKB15N65EH5ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 30A | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 105W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Operating Temperature | 175°C | |
| Series | High Speed Fifth Generation | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 30A | ||
Product Type IGBT Single Transistor IC | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 105W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Operating Temperature 175°C | ||
Series High Speed Fifth Generation | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon high speed switching insulated-gate bipolar transistor copacked with full rated current rapid 1 antiparallel diode also has 650v breakdown voltage.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Related links
- Infineon IKB15N65EH5ATMA1 IGBT 3-Pin PG-TO263-3
- Infineon IKB40N65EF5ATMA1 IGBT 3-Pin PG-TO263-3
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