Infineon IGB50N60TATMA1 IGBT, 90 A 600 V, 3-Pin PG-TO263-3
- RS stock no.:
- 215-6630
- Mfr. Part No.:
- IGB50N60TATMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
R 200,57
(exc. VAT)
R 230,656
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 3,854 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 100.285 | R 200.57 |
| 10 - 98 | R 97.78 | R 195.56 |
| 100 - 248 | R 94.845 | R 189.69 |
| 250 - 498 | R 91.05 | R 182.10 |
| 500 + | R 87.41 | R 174.82 |
*price indicative
- RS stock no.:
- 215-6630
- Mfr. Part No.:
- IGB50N60TATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 90 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 333 W | |
| Package Type | PG-TO263-3 | |
| Pin Count | 3 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 90 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 333 W | ||
Package Type PG-TO263-3 | ||
Pin Count 3 | ||
The Infineon low loss insulated-gate bipolar transistor in trenchstop and fieldstop technology.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
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