Infineon IKB15N65EH5ATMA1 IGBT, 30 A 650 V, 3-Pin PG-TO263-3

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Subtotal (1 reel of 1000 units)*

R 21 979,00

(exc. VAT)

R 25 276,00

(inc. VAT)

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Orders below R 1 500,00 (exc. VAT) cost R 120,00.
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Units
Per unit
Per Reel*
1000 - 1000R 21.979R 21,979.00
2000 - 2000R 21.43R 21,430.00
3000 +R 20.787R 20,787.00

*price indicative

RS stock no.:
215-6647
Mfr. Part No.:
IKB15N65EH5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20 V, ±30 V

Maximum Power Dissipation

105 W

Package Type

PG-TO263-3

Pin Count

3

The Infineon high speed switching insulated-gate bipolar transistor copacked with full rated current rapid 1 antiparallel diode also has 650v breakdown voltage.

High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference

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