Infineon IKB40N65EH5ATMA1 IGBT, 74 A 650 V, 3-Pin PG-TO247-3
- RS stock no.:
- 215-6653
- Mfr Part No.:
- IKB40N65EH5ATMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
R 142,35
(exc. VAT)
R 163,702
(inc. VAT)
Add 22 units to get free delivery
Temporarily out of stock
- Shipping from 25 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 71.175 | R 142.35 |
| 10 - 98 | R 69.395 | R 138.79 |
| 100 - 248 | R 67.315 | R 134.63 |
| 250 - 498 | R 64.62 | R 129.24 |
| 500 + | R 62.035 | R 124.07 |
*price indicative
- RS stock no.:
- 215-6653
- Mfr Part No.:
- IKB40N65EH5ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 74 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20 V, ±30 V | |
| Maximum Power Dissipation | 333 W | |
| Package Type | PG-TO247-3 | |
| Pin Count | 3 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 74 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20 V, ±30 V | ||
Maximum Power Dissipation 333 W | ||
Package Type PG-TO247-3 | ||
Pin Count 3 | ||
The Infineon high speed switching insulated-gate bipolar transistor copacked with full rated current rapid 1 antiparallel diode.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
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