Infineon IHW30N65R5XKSA1 IGBT, 60 A 650 V, 3-Pin PG-TO247-3
- RS stock no.:
- 215-6639
- Mfr. Part No.:
- IHW30N65R5XKSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
R 108,47
(exc. VAT)
R 124,74
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 255 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 21.694 | R 108.47 |
| 10 - 95 | R 21.152 | R 105.76 |
| 100 - 245 | R 20.518 | R 102.59 |
| 250 - 495 | R 19.698 | R 98.49 |
| 500 + | R 18.91 | R 94.55 |
*price indicative
- RS stock no.:
- 215-6639
- Mfr. Part No.:
- IHW30N65R5XKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 60 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 176 W | |
| Package Type | PG-TO247-3 | |
| Pin Count | 3 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 60 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 176 W | ||
Package Type PG-TO247-3 | ||
Pin Count 3 | ||
The Infineon resonant switching series reverse conducting insulated-gate bipolar transistor with monolithic body diode.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Related links
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