Infineon IHW30N65R5XKSA1, Type N-Channel IGBT Single Transistor IC, 60 A 650 V, 3-Pin TO-247, Through Hole
- RS stock no.:
- 215-6639
- Mfr. Part No.:
- IHW30N65R5XKSA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 251,81
(exc. VAT)
R 289,58
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 255 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 50.362 | R 251.81 |
| 10 - 95 | R 49.102 | R 245.51 |
| 100 - 245 | R 47.628 | R 238.14 |
| 250 - 495 | R 45.722 | R 228.61 |
| 500 + | R 43.894 | R 219.47 |
*price indicative
- RS stock no.:
- 215-6639
- Mfr. Part No.:
- IHW30N65R5XKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Continuous Collector Current Ic | 60A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 176W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.7V | |
| Maximum Operating Temperature | 175°C | |
| Width | 16.13 mm | |
| Length | 42mm | |
| Height | 5.21mm | |
| Standards/Approvals | RoHS | |
| Series | Resonant Switching | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT Single Transistor IC | ||
Maximum Continuous Collector Current Ic 60A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 176W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.7V | ||
Maximum Operating Temperature 175°C | ||
Width 16.13 mm | ||
Length 42mm | ||
Height 5.21mm | ||
Standards/Approvals RoHS | ||
Series Resonant Switching | ||
Automotive Standard No | ||
The Infineon resonant switching series reverse conducting insulated-gate bipolar transistor with monolithic body diode.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Related links
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