Infineon IHW30N160R5XKSA1, N-Channel IGBT, 30 A 1600 V, 3-Pin TO-247, Through Hole
- RS stock no.:
- 218-4399
- Distrelec Article No.:
- 304-31-963
- Mfr. Part No.:
- IHW30N160R5XKSA1
- Manufacturer:
- Infineon
Image representative of range
Subtotal (5 units, in packs of 5)*
R 422,27
(exc. VAT)
R 485,61
(inc. VAT)
FREE delivery for orders over R 1,500.00
- 65 unit(s) ready to ship from another location
- Plus 1,690 unit(s) shipping from 14 October 2026
- Plus 240 unit(s) shipping from 29 October 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 84.454 | R 422.27 |
| 10 - 95 | R 82.342 | R 411.71 |
| 100 - 245 | R 79.872 | R 399.36 |
| 250 - 495 | R 76.678 | R 383.39 |
| 500 + | R 73.61 | R 368.05 |
*price indicative
- RS stock no.:
- 218-4399
- Distrelec Article No.:
- 304-31-963
- Mfr. Part No.:
- IHW30N160R5XKSA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 30A | |
| Maximum Collector Emitter Voltage Vceo | 1600V | |
| Maximum Power Dissipation Pd | 263W | |
| Number of Transistors | 1 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±20 ±25 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.85V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Height | 5.3mm | |
| Length | 21.5mm | |
| Width | 16.3mm | |
| Series | IHW30N160R5 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 30A | ||
Maximum Collector Emitter Voltage Vceo 1600V | ||
Maximum Power Dissipation Pd 263W | ||
Number of Transistors 1 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±20 ±25 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.85V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Height 5.3mm | ||
Length 21.5mm | ||
Width 16.3mm | ||
Series IHW30N160R5 | ||
Automotive Standard No | ||
Infineon IHW30N160R5 Series IGBT, 1600V Collector-Emitter Voltage, 30A Collector Current - IHW30N160R5XKSA1
Features and Benefits:
• Withstands collector-emitter voltage of 1600 V for high‑voltage systems
• Power dissipation rating of 263 W supports heavy switching duty
• Low collector-emitter saturation voltage of 1.85 V reduces conduction losses
• Gate-emitter voltage tolerance of ±20-25 V permits robust gate‑drive margins
• Qualified to JEDEC 47/20/22 for standardised thermal and mechanical resilience
Applications
• Used for medium‑power traction and motor‑drive modules
• Ideal for high‑voltage DC-DC conversion circuits
• Can be used for power supplies in industrial automation
• Used with thermal‑management systems operating at elevated temperatures
What operating temperature range can it tolerate?
How many transistor elements are contained within the device?
What mounting method and package type does it use?
Are there any approvals for mechanical and thermal testing?
Related links
- Infineon 30 A 1600 V Through Hole
- STMicroelectronics 85 A 1600 V Through Hole
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- Infineon 30 A 600 V Through Hole
- Infineon 30 A 650 V Through Hole
- Infineon 30 A 1200 V Through Hole
- Infineon IKW30N60H3FKSA1 30 A 600 V Through Hole
