IXYS MII200-12A4 Series IGBT Module, 270 A 1200 V, 7-Pin Y3 DCB, Screw Mount

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Semikron Danfoss SKM300GB125D Dual Half Bridge IGBT Module, 300 A 1200 V, 7-Pin SEMITRANS3, Panel Mount
RS stock no.
468-2498

Each

R 11,242.04

(exc. VAT)

R 12,928.35

(inc. VAT)

RS stock no.:
193-650
Mfr. Part No.:
MII200-12A4
Manufacturer:
IXYS
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Brand

IXYS

Maximum Continuous Collector Current

270 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Configuration

Series

Package Type

Y3 DCB

Mounting Type

Screw Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Series

Dimensions

110 x 62 x 30mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

IGBT Modules, IXYS



IGBT Discretes & Modules, IXYS


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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