Winbond SLC NAND 2Gbit Parallel Flash Memory 63-Pin VFBGA, W29N02GVBIAF
- RS stock no.:
- 188-2841
- Mfr. Part No.:
- W29N02GVBIAF
- Manufacturer:
- Winbond
4 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
Not Available for premium delivery
Added
Price (Excl VAT) Each (In a Pack of 2)
R 64,92
(exc. VAT)
R 74,66
(inc. VAT)
| Units | Per unit | Per Pack* |
| 2 - 8 | R 64,92 | R 129,84 |
| 10 - 18 | R 63,295 | R 126,59 |
| 20 - 48 | R 61,395 | R 122,79 |
| 50 - 98 | R 58,94 | R 117,88 |
| 100 + | R 56,58 | R 113,16 |
| *price indicative | ||
- RS stock no.:
- 188-2841
- Mfr. Part No.:
- W29N02GVBIAF
- Manufacturer:
- Winbond
Technical data sheets
Legislation and Compliance
Product Details
Density : 2Gbit (Single chip solution)
Vcc : 2.7V to 3.6V
Bus width : x8
Operating temperature
Industrial: -40°C to 85°C
Single-Level Cell (SLC) technology.
Organization
Density: 2G-bit/256M-byte
Page size
2,112 bytes (2048 + 64 bytes)
Block size
64 pages (128K + 4K bytes)
Highest Performance
Read performance (Max.)
Random read: 25us
Sequential read cycle: 25ns
Write Erase performance
Page program time: 250us(typ.)
Block erase time: 2ms(typ.)
Endurance 100,000 Erase/Program Cycles(2)
10-years data retention
Command set
Standard NAND command set
Additional command support
Sequential Cache Read
Random Cache Read
Cache Program
Copy Back
Two-plane operation
Contact Winbond for OTP feature
Contact Winbond for block Lock feature
Lowest power consumption
Read: 25mA(typ.3V)
Program/Erase: 25mA(typ.3V)
CMOS standby: 10uA(typ.)
Space Efficient Packaging
48-pin standard TSOP1
63-ball VFBGA
Vcc : 2.7V to 3.6V
Bus width : x8
Operating temperature
Industrial: -40°C to 85°C
Single-Level Cell (SLC) technology.
Organization
Density: 2G-bit/256M-byte
Page size
2,112 bytes (2048 + 64 bytes)
Block size
64 pages (128K + 4K bytes)
Highest Performance
Read performance (Max.)
Random read: 25us
Sequential read cycle: 25ns
Write Erase performance
Page program time: 250us(typ.)
Block erase time: 2ms(typ.)
Endurance 100,000 Erase/Program Cycles(2)
10-years data retention
Command set
Standard NAND command set
Additional command support
Sequential Cache Read
Random Cache Read
Cache Program
Copy Back
Two-plane operation
Contact Winbond for OTP feature
Contact Winbond for block Lock feature
Lowest power consumption
Read: 25mA(typ.3V)
Program/Erase: 25mA(typ.3V)
CMOS standby: 10uA(typ.)
Space Efficient Packaging
48-pin standard TSOP1
63-ball VFBGA
2Gb SLC NAND Flash Memory with uniform 2KB+64B page size.
Bus Width: x8
Random Read: 25us
Page Program Time: 250us(typ.)
Block Erase Time: 2ms(typ.)
Support OTP Memory Area
Random Read: 25us
Page Program Time: 250us(typ.)
Block Erase Time: 2ms(typ.)
Support OTP Memory Area
Specification
Attribute | Value |
|---|---|
| Memory Size | 2Gbit |
| Interface Type | Parallel |
| Package Type | VFBGA |
| Pin Count | 63 |
| Organisation | 256M x 8 bit |
| Mounting Type | Surface Mount |
| Cell Type | SLC NAND |
| Minimum Operating Supply Voltage | 2.7 V |
| Maximum Operating Supply Voltage | 3.6 V |
| Block Organisation | Symmetrical |
| Length | 11.1mm |
| Height | 0.6mm |
| Width | 9.1mm |
| Dimensions | 11.1 x 9.1 x 0.6mm |
| Number of Bits per Word | 8bit |
| Maximum Random Access Time | 25µs |
| Series | W29N |
| Maximum Operating Temperature | +85 °C |
| Minimum Operating Temperature | -40 °C |
| Number of Words | 256M |