Winbond SLC NAND 4Gbit Parallel Flash Memory 63-Pin VFBGA, W29N04GVBIAF

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Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
RS stock no.:
188-2561
Mfr. Part No.:
W29N04GVBIAF
Manufacturer:
Winbond
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Brand

Winbond

Memory Size

4Gbit

Interface Type

Parallel

Package Type

VFBGA

Pin Count

63

Organisation

512M x 8 bit

Mounting Type

Surface Mount

Cell Type

SLC NAND

Minimum Operating Supply Voltage

2.7 V

Maximum Operating Supply Voltage

3.6 V

Length

11.1mm

Height

0.6mm

Width

9.1mm

Dimensions

11.1 x 9.1 x 0.6mm

Number of Bits per Word

8bit

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+85 °C

Number of Words

512M

Series

W29N

Maximum Random Access Time

25µs

Density : 4Gbit (Single chip solution)

Vcc : 2.7V to 3.6V

Bus width : x8

Operating temperature

Industrial: -40°C to 85°C

Single-Level Cell (SLC) technology.

Organization

Density: 4G-bit/512M-byte

Page size

2,112 bytes (2048 + 64 bytes)

Block size

64 pages (128K + 4K bytes)

Highest Performance

Read performance (Max.)

Random read: 25us

Sequential read cycle: 25ns

Write Erase performance

Page program time: 250us(typ.)

Block erase time: 2ms(typ.)

Endurance 100,000 Erase/Program Cycles(1)

10-years data retention

Command set

Standard NAND command set

Additional command support

Sequential Cache Read

Random Cache Read

Cache Program

Copy Back

Two-plane operation

Contact Winbond for OTP feature

Contact Winbond for Block Lock feature

Lowest power consumption

Read: 25mA(typ.)

Program/Erase: 25mA(typ.)

CMOS standby: 10uA(typ.)

Space Efficient Packaging

48-pin standard TSOP1

63-ball VFBGA

4Gb SLC NAND Flash Memory with uniform 2KB+64B page size.

Bus Width: x8

Random Read: 25us

Page Program Time: 250us(typ.)

Block Erase Time: 2ms(typ.)

Support OTP Memory Area

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