Winbond SLC NAND 2Gbit Parallel Flash Memory 63-Pin VFBGA, W29N02GVBIAA

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Subtotal (1 pack of 2 units)*

R 266,29

(exc. VAT)

R 306,234

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 133.145R 266.29
10 - 18R 129.815R 259.63
20 - 48R 125.92R 251.84
50 - 98R 120.885R 241.77
100 +R 116.05R 232.10

*price indicative

Packaging Options:
RS stock no.:
188-2808
Mfr. Part No.:
W29N02GVBIAA
Manufacturer:
Winbond
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Brand

Winbond

Memory Size

2Gbit

Interface Type

Parallel

Package Type

VFBGA

Pin Count

63

Organisation

256M x 8 bit

Mounting Type

Surface Mount

Cell Type

SLC NAND

Minimum Operating Supply Voltage

2.7 V

Maximum Operating Supply Voltage

3.6 V

Block Organisation

Symmetrical

Length

11.1mm

Height

0.6mm

Width

9.1mm

Dimensions

11.1 x 9.1 x 0.6mm

Minimum Operating Temperature

-40 °C

Number of Bits per Word

8bit

Maximum Operating Temperature

+85 °C

Series

W29N

Number of Words

256M

Maximum Random Access Time

25µs

Density : 2Gbit (Single chip solution)

Vcc : 2.7V to 3.6V

Bus width : x8

Operating temperature

Industrial: -40°C to 85°C

Single-Level Cell (SLC) technology.

Organization

Density: 2G-bit/256M-byte

Page size

2,112 bytes (2048 + 64 bytes)

Block size

64 pages (128K + 4K bytes)

Highest Performance

Read performance (Max.)

Random read: 25us

Sequential read cycle: 25ns

Write Erase performance

Page program time: 250us(typ.)

Block erase time: 2ms(typ.)

Endurance 100,000 Erase/Program Cycles(2)

10-years data retention

Command set

Standard NAND command set

Additional command support

Sequential Cache Read

Random Cache Read

Cache Program

Copy Back

Two-plane operation

Contact Winbond for OTP feature

Contact Winbond for block Lock feature

Lowest power consumption

Read: 25mA(typ.3V)

Program/Erase: 25mA(typ.3V)

CMOS standby: 10uA(typ.)

Space Efficient Packaging

48-pin standard TSOP1

63-ball VFBGA

2Gb SLC NAND Flash Memory with uniform 2KB+64B page size.

Bus Width: x8

Random Read: 25us

Page Program Time: 250us(typ.)

Block Erase Time: 2ms(typ.)

Support OTP Memory Area

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