Winbond SLC NAND 8Gbit Parallel Flash Memory 63-Pin VFBGA, W29N08GZBIBA

Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
188-2567
Mfr. Part No.:
W29N08GZBIBA
Brand:
Winbond
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Brand

Winbond

Memory Size

8Gbit

Interface Type

Parallel

Package Type

VFBGA

Pin Count

63

Organisation

1024K x 8 bit

Mounting Type

Surface Mount

Cell Type

SLC NAND

Minimum Operating Supply Voltage

1.7 V

Maximum Operating Supply Voltage

1.95 V

Block Organisation

Symmetrical

Length

11.1mm

Height

0.6mm

Width

9.1mm

Dimensions

11.1 x 9.1 x 0.6mm

Series

W29N

Number of Words

1024K

Minimum Operating Temperature

-40 °C

Number of Bits per Word

8bit

Maximum Random Access Time

25µs

Maximum Operating Temperature

+85 °C

Density : 8Gbit (2 chip stacked solution)

Vcc : 1.7V to 1.95V

Bus width : x8/x16

Operating temperature

Industrial: -40°C to 85°C

Single-Level Cell (SLC) technology.

Organization

Density: 8G-bit/1G-byte

Page size

2,112 bytes (2048 + 64 bytes)

1,056 words (1024 + 32 words)

Block size

64 pages (128K + 4K bytes)

64 pages (64K + 2K words)

Highest Performance

Read performance (Max.)

Random read: 25us

Sequential read cycle: 35ns

Write Erase performance

Page program time: 250us(typ.)

Block erase time: 2ms(typ.)

Endurance 100,000 Erase/Program Cycles(1)

10-years data retention

Command set

Standard NAND command set

Additional command support

Copy Back

Two-plane operation

Contact Winbond for OTP feature

Contact Winbond for Block Lock feature

Lowest power consumption

Read: 13mA(typ.)

Program/Erase: 13mA(typ.)

CMOS standby: 20uA(typ.)

Space Efficient Packaging

48-pin standard TSOP1

63-ball VFBGA

8Gb SLC NAND Flash Memory with uniform 2KB+64B page size.

Bus Width: x8

Random Read: 25us

Page Program Time: 250us(typ.)

Block Erase Time: 2ms(typ.)

Support OTP Memory Area

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