DiodesZetex DMN N-Channel MOSFET, 1.6 A, 100 V Enhancement, 4-Pin SOT-23 DMN10H220L-7
- RS stock no.:
- 921-1048
- Mfr. Part No.:
- DMN10H220L-7
- Manufacturer:
- DiodesZetex
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 30 units)*
R 250,44
(exc. VAT)
R 288,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 570 unit(s) ready to ship from another location
- Plus 1,110 unit(s) shipping from 04 November 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 30 - 120 | R 8.348 | R 250.44 |
| 150 - 420 | R 8.139 | R 244.17 |
| 450 - 870 | R 7.895 | R 236.85 |
| 900 - 2970 | R 7.579 | R 227.37 |
| 3000 + | R 7.276 | R 218.28 |
*price indicative
- RS stock no.:
- 921-1048
- Mfr. Part No.:
- DMN10H220L-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.6A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-23 | |
| Series | DMN | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.3W | |
| Maximum Gate Source Voltage Vgs | -16V, +16V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 8.3nC | |
| Forward Voltage Vf | 700mV | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Length | 3mm | |
| Width | 1.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q200, AEC-Q100, AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.6A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-23 | ||
Series DMN | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.3W | ||
Maximum Gate Source Voltage Vgs -16V, +16V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 8.3nC | ||
Forward Voltage Vf 700mV | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Length 3mm | ||
Width 1.4mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q200, AEC-Q100, AEC-Q101 | ||
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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