DiodesZetex ZXMP10A17E6 Type P-Channel MOSFET, 1.6 A, 100 V Enhancement, 6-Pin SOT-23
- RS stock no.:
- 922-8024
- Mfr. Part No.:
- ZXMP10A17E6TA
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 reel of 3000 units)*
R 19 044,00
(exc. VAT)
R 21 900,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 36,000 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | R 6.348 | R 19,044.00 |
| 6000 - 9000 | R 6.189 | R 18,567.00 |
| 12000 - 27000 | R 6.004 | R 18,012.00 |
| 30000 + | R 5.764 | R 17,292.00 |
*price indicative
- RS stock no.:
- 922-8024
- Mfr. Part No.:
- ZXMP10A17E6TA
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 1.6A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | ZXMP10A17E6 | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 10.7nC | |
| Maximum Power Dissipation Pd | 1.7W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -0.95V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.8 mm | |
| Length | 3.1mm | |
| Height | 1.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 1.6A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series ZXMP10A17E6 | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 10.7nC | ||
Maximum Power Dissipation Pd 1.7W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -0.95V | ||
Maximum Operating Temperature 150°C | ||
Width 1.8 mm | ||
Length 3.1mm | ||
Height 1.3mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 100V to 450V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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