IXYS HiperFET, Polar Type N-Channel MOSFET, 26 A, 500 V Enhancement, 3-Pin TO-247
- RS stock no.:
- 920-0773
- Mfr. Part No.:
- IXFH26N50P
- Manufacturer:
- IXYS
Image representative of range
Bulk discount available
Subtotal (1 tube of 30 units)*
R 3 185,34
(exc. VAT)
R 3 663,15
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 270 unit(s) shipping from 12 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | R 106.178 | R 3,185.34 |
| 60 - 90 | R 103.524 | R 3,105.72 |
| 120 - 270 | R 100.418 | R 3,012.54 |
| 300 - 570 | R 96.402 | R 2,892.06 |
| 600 + | R 92.546 | R 2,776.38 |
*price indicative
- RS stock no.:
- 920-0773
- Mfr. Part No.:
- IXFH26N50P
- Manufacturer:
- IXYS
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | HiperFET, Polar | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 230mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 400W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 60nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Height | 21.46mm | |
| Width | 5.3 mm | |
| Length | 16.26mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series HiperFET, Polar | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 230mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 400W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 60nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Height 21.46mm | ||
Width 5.3 mm | ||
Length 16.26mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
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