IXYS HiperFET, Polar Type N-Channel MOSFET, 26 A, 600 V Enhancement, 3-Pin TO-247 IXFH26N60P

Image representative of range

Bulk discount available

Subtotal (1 unit)*

R 195,96

(exc. VAT)

R 225,35

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 5 unit(s) ready to ship from another location
  • Plus 47 unit(s) shipping from 18 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 24R 195.96
25 - 99R 191.06
100 - 249R 185.33
250 - 499R 177.92
500 +R 170.80

*price indicative

Packaging Options:
RS stock no.:
194-451
Distrelec Article No.:
302-53-317
Mfr. Part No.:
IXFH26N60P
Manufacturer:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

26A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-247

Series

HiperFET, Polar

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

270mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

72nC

Maximum Power Dissipation Pd

460W

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

5.3 mm

Length

16.26mm

Height

21.46mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series


N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

Related links