IXYS Type N-Channel MOSFET, 36 A, 500 V Enhancement, 3-Pin TO-247
- RS stock no.:
- 920-0782
- Mfr. Part No.:
- IXFH36N50P
- Manufacturer:
- IXYS
Image representative of range
Bulk discount available
Subtotal (1 tube of 30 units)*
R 4 324,80
(exc. VAT)
R 4 973,40
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 90 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | R 144.16 | R 4,324.80 |
| 60 - 90 | R 140.556 | R 4,216.68 |
| 120 - 270 | R 136.339 | R 4,090.17 |
| 300 - 570 | R 130.885 | R 3,926.55 |
| 600 + | R 125.65 | R 3,769.50 |
*price indicative
- RS stock no.:
- 920-0782
- Mfr. Part No.:
- IXFH36N50P
- Manufacturer:
- IXYS
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 170mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 540W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 93nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 16.26mm | |
| Height | 21.46mm | |
| Width | 5.3 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 170mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 540W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 93nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 16.26mm | ||
Height 21.46mm | ||
Width 5.3 mm | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS HiperFET 36 A 3-Pin TO-247AD IXFH36N50P
- IXYS HiperFET 44 A 3-Pin TO-247AD IXFH44N50P
- IXYS HiperFET 120 A 3-Pin TO-247AD IXFH120N15P
- IXYS HiperFET 24 A 3-Pin TO-247AD IXFH24N80P
- IXYS HiperFET 36 A 3-Pin TO-247 IXFH36N60P
- IXYS HiperFET 36 A 3-Pin TO-220 IXTP36N30P
- IXYS HiperFET 16 A 3-Pin TO-247 IXFH16N50P
- IXYS HiperFET 26 A 3-Pin TO-247 IXFH26N50P
