N-Channel MOSFET, 9.3 A, 200 V, 3-Pin TO-220AB Infineon IRF630NPBF

RS stock no.:: 543-0068
Mfr. Part No.:: IRF630NPBF
Manufacturer:: Infineon

N-Channel MOSFET, 9.3 A, 200 V, 3-Pin TO-220AB Infineon IRF630NPBF

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R 18 32

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R 21 07

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1 - 24	R 18,32
25 - 99	R 17,86
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250 - 499	R 16,63
500 +	R 15,96

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RS stock no.:: 543-0068
Mfr. Part No.:: IRF630NPBF
Manufacturer:: Infineon

Infineon HEXFET Series MOSFET, 9.3A Maximum Continuous Drain Current, 82W Maximum Power Dissipation - IRF630NPBF

This N-channel MOSFET is designed for a range of applications in the automation and electronics sectors. It offers optimal power dissipation capabilities and efficient performance, crucial for high-performance systems. With a maximum drain-source voltage of 200V and a continuous drain current of 9.3A, it ensures dependable operation in challenging electronic environments.

Features & Benefits

• High power rating supports extensive electrical applications
• Efficient design lowers thermal resistance for effective cooling
• Fast switching speeds improve performance in dynamic systems
• Simple drive requirements aid in circuit integration
• Fully avalanche rated, making it suitable for rugged conditions

Applications

• Utilised in industrial power supplies to maintain stable voltage regulation
• Employed in motor control systems for efficient functionality
• Ideal for DC-DC converters and power management circuits
• Used in HVAC systems to control compressor motors
• Appropriate for renewable energy systems, enhancing power efficiency

What is the maximum gate-source voltage that can be applied?

The maximum gate-source voltage is ±20V, ensuring compatibility with various circuit designs.

How does the device handle thermal dissipation during operation?

It has a power dissipation capacity of 82W, allowing for efficient heat management while in use.

Is there a specific mounting type recommended for optimal performance?

The MOSFET is intended for through-hole mounting, which promotes reliable thermal management and electrical connectivity.

What type of applications benefit from its fast switching capabilities?

Applications requiring high-speed operation, like switching power supplies and compact converters, take advantage of its swift switching speeds.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	9.3 A
Maximum Drain Source Voltage	200 V
Series	HEXFET
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	300 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	82 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+175 °C
Length	10.54mm
Number of Elements per Chip	1
Transistor Material	Si
Typical Gate Charge @ Vgs	35 nC @ 10 V
Width	4.69mm
Forward Diode Voltage	1.3V
Height	8.77mm
Minimum Operating Temperature	-55 °C