Vishay SiR870ADP N-Channel MOSFET, 60 A, 100 V Enhancement, 8-Pin SO-8 SIR870ADP-T1-GE3

Subtotal (3000 units, on reels of 3000)*

R 54 246,00

(exc. VAT)

R 62 382,00

(inc. VAT)

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Last RS stock
  • Final 3,000 unit(s), ready to ship from another location
Units
Per unit
Per Reel*
3000 +R 18.082R 54,246.00

*price indicative

RS stock no.:
919-4242
Mfr. Part No.:
SIR870ADP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

SiR870ADP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

10.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

53.5nC

Maximum Power Dissipation Pd

104W

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

-20V, +20V

Maximum Operating Temperature

150°C

Length

6.25mm

Height

1.12mm

Width

5.26mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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