Vishay SiR870ADP Type N-Channel MOSFET, 60 A, 100 V Enhancement, 8-Pin SO-8 SIR870ADP-T1-GE3

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Subtotal (1 pack of 5 units)*

R 161,71

(exc. VAT)

R 185,965

(inc. VAT)

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  • 4,745 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
5 - 45R 32.342R 161.71
50 - 245R 31.534R 157.67
250 - 995R 30.588R 152.94
1000 - 2995R 29.364R 146.82
3000 +R 28.19R 140.95

*price indicative

Packaging Options:
RS stock no.:
787-9355
Mfr. Part No.:
SIR870ADP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

100V

Series

SiR870ADP

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

10.5mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

53.5nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

104W

Maximum Operating Temperature

150°C

Length

6.25mm

Standards/Approvals

No

Height

1.12mm

Width

5.26 mm

Automotive Standard

No

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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