Vishay SiR870ADP Type N-Channel MOSFET, 60 A, 100 V Enhancement, 8-Pin SO-8 SIR870ADP-T1-GE3
- RS stock no.:
- 787-9355
- Mfr. Part No.:
- SIR870ADP-T1-GE3
- Manufacturer:
- Vishay
Bulk discount available
Subtotal (1 pack of 5 units)*
R 154,93
(exc. VAT)
R 178,17
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 4,745 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 30.986 | R 154.93 |
| 50 - 245 | R 30.212 | R 151.06 |
| 250 - 995 | R 29.306 | R 146.53 |
| 1000 - 2995 | R 28.134 | R 140.67 |
| 3000 + | R 27.008 | R 135.04 |
*price indicative
- RS stock no.:
- 787-9355
- Mfr. Part No.:
- SIR870ADP-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SiR870ADP | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 53.5nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 104W | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.25mm | |
| Width | 5.26 mm | |
| Standards/Approvals | No | |
| Height | 1.12mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SiR870ADP | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 53.5nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 104W | ||
Maximum Operating Temperature 150°C | ||
Length 6.25mm | ||
Width 5.26 mm | ||
Standards/Approvals No | ||
Height 1.12mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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