Vishay SiR418DP N-Channel MOSFET, 23 A, 40 V Enhancement, 8-Pin SO-8 SIR418DP-T1-GE3

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RS stock no.:
165-7266
Mfr. Part No.:
SIR418DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

23A

Maximum Drain Source Voltage Vds

40V

Series

SiR418DP

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

-20V, +20V

Forward Voltage Vf

0.71V

Typical Gate Charge Qg @ Vgs

50nC

Maximum Power Dissipation Pd

39W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

5.26mm

Standards/Approvals

No

Height

1.12mm

Length

6.25mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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