P-Channel MOSFET, 6 A, 12 V, 3-Pin SOT-23 Vishay SI2333DDS-T1-GE3
- RS stock no.:
- 919-4220
- Mfr. Part No.:
- SI2333DDS-T1-GE3
- Manufacturer:
- Vishay
45000 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
Not Available for premium delivery
Added
Price (Excl VAT) Each (On a Reel of 3000)
R 10,028
(exc. VAT)
R 11,532
(inc. VAT)
| Units | Per unit | Per Reel* |
| 3000 + | R 10,028 | R 30 084,00 |
| *price indicative | ||
- RS stock no.:
- 919-4220
- Mfr. Part No.:
- SI2333DDS-T1-GE3
- Manufacturer:
- Vishay
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Specification
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 6 A |
| Maximum Drain Source Voltage | 12 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 19 Ω |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.4V |
| Maximum Power Dissipation | 1.7 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Length | 3.04mm |
| Number of Elements per Chip | 1 |
| Width | 1.4mm |
| Typical Gate Charge @ Vgs | 23 nC @ 8 V |
| Minimum Operating Temperature | -55 °C |
| Height | 1.02mm |
- RS stock no.:
- 919-4220
- Mfr. Part No.:
- SI2333DDS-T1-GE3
- Manufacturer:
- Vishay