Vishay Si2309CDS Type P-Channel MOSFET, 1.2 A, 60 V Enhancement, 3-Pin SOT-23
- RS stock no.:
- 919-0262
- Mfr. Part No.:
- SI2309CDS-T1-GE3
- Manufacturer:
- Vishay
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Bulk discount available
Subtotal (1 reel of 3000 units)*
R 12 042,00
(exc. VAT)
R 13 848,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 12,000 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | R 4.014 | R 12,042.00 |
| 6000 - 6000 | R 3.914 | R 11,742.00 |
| 9000 - 15000 | R 3.796 | R 11,388.00 |
| 18000 - 24000 | R 3.644 | R 10,932.00 |
| 27000 + | R 3.499 | R 10,497.00 |
*price indicative
- RS stock no.:
- 919-0262
- Mfr. Part No.:
- SI2309CDS-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.2A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | Si2309CDS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 345mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 2.7nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Standards/Approvals | No | |
| Width | 1.4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.2A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series Si2309CDS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 345mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 2.7nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Height 1.02mm | ||
Standards/Approvals No | ||
Width 1.4 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
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