Vishay Si2309CDS Type P-Channel MOSFET, 1.2 A, 60 V Enhancement, 3-Pin SOT-23 SI2309CDS-T1-GE3
- RS stock no.:
- 710-3250
- Mfr. Part No.:
- SI2309CDS-T1-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 10 units)*
R 69,37
(exc. VAT)
R 79,78
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 80 unit(s) shipping from 01 June 2026
- Plus 13,560 unit(s) shipping from 08 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 6.937 | R 69.37 |
| 50 - 90 | R 6.764 | R 67.64 |
| 100 - 240 | R 6.561 | R 65.61 |
| 250 - 490 | R 6.299 | R 62.99 |
| 500 + | R 6.047 | R 60.47 |
*price indicative
- RS stock no.:
- 710-3250
- Mfr. Part No.:
- SI2309CDS-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.2A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | Si2309CDS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 345mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1W | |
| Typical Gate Charge Qg @ Vgs | 2.7nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.02mm | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.2A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series Si2309CDS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 345mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1W | ||
Typical Gate Charge Qg @ Vgs 2.7nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 1.02mm | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay Si2309CDS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23
- Vishay Si2343CDS Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Vishay Si2305CDS Type P-Channel MOSFET 8 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET 80 V Enhancement, 3-Pin SOT-23