IXYS X2-Class Type N-Channel MOSFET, 76 A, 650 V Enhancement, 4-Pin SOT-227 IXTN102N65X2
- RS stock no.:
- 917-1454
- Distrelec Article No.:
- 302-53-429
- Mfr. Part No.:
- IXTN102N65X2
- Manufacturer:
- IXYS
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Subtotal (1 unit)*
R 685,62
(exc. VAT)
R 788,46
(inc. VAT)
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In Stock
- 56 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 1 - 4 | R 685.62 |
| 5 - 9 | R 668.48 |
| 10 - 19 | R 648.43 |
| 20 - 39 | R 622.49 |
| 40 + | R 597.59 |
*price indicative
- RS stock no.:
- 917-1454
- Distrelec Article No.:
- 302-53-429
- Mfr. Part No.:
- IXTN102N65X2
- Manufacturer:
- IXYS
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 76A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | SOT-227 | |
| Series | X2-Class | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 152nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 595W | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 38.23mm | |
| Height | 9.6mm | |
| Width | 25.42 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 76A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type SOT-227 | ||
Series X2-Class | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 152nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 595W | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 38.23mm | ||
Height 9.6mm | ||
Width 25.42 mm | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS X2-Class Series
The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge)
Intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 4-Pin SOT-227
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 IXTP4N65X2
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 IXTP8N65X2M
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-264
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247