IXYS X2-Class Type N-Channel MOSFET, 120 A, 650 V Enhancement, 3-Pin TO-264 IXTK120N65X2
- RS stock no.:
- 917-1441
- Distrelec Article No.:
- 302-53-427
- Mfr. Part No.:
- IXTK120N65X2
- Manufacturer:
- IXYS
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Subtotal (1 unit)*
R 404,87
(exc. VAT)
R 465,60
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 4 unit(s) shipping from 05 January 2026
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Units | Per unit |
|---|---|
| 1 - 4 | R 404.87 |
| 5 - 9 | R 394.75 |
| 10 - 24 | R 382.91 |
| 25 - 49 | R 367.59 |
| 50 + | R 352.89 |
*price indicative
- RS stock no.:
- 917-1441
- Distrelec Article No.:
- 302-53-427
- Mfr. Part No.:
- IXTK120N65X2
- Manufacturer:
- IXYS
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | X2-Class | |
| Package Type | TO-264 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.4V | |
| Typical Gate Charge Qg @ Vgs | 230nC | |
| Maximum Power Dissipation Pd | 1.25kW | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.3mm | |
| Standards/Approvals | No | |
| Length | 20.3mm | |
| Width | 26.3 mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 30253427 | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series X2-Class | ||
Package Type TO-264 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.4V | ||
Typical Gate Charge Qg @ Vgs 230nC | ||
Maximum Power Dissipation Pd 1.25kW | ||
Maximum Operating Temperature 150°C | ||
Height 5.3mm | ||
Standards/Approvals No | ||
Length 20.3mm | ||
Width 26.3 mm | ||
Automotive Standard No | ||
Distrelec Product Id 30253427 | ||
N-channel Power MOSFET, IXYS X2-Class Series
The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge)
Intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-264
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin PLUS247
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin PLUS247 IXTX120N65X2
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- IXYS X2-Class Type N-Channel Power MOSFET 650 V Enhancement, 3-Pin TO-264P
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247