IXYS X2-Class N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-247 IXTH34N65X2
- RS stock no.:
- 917-1463
- Distrelec Article No.:
- 304-44-490
- Mfr. Part No.:
- IXTH34N65X2
- Manufacturer:
- IXYS
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
R 291,01
(exc. VAT)
R 334,662
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 324 unit(s) shipping from 15 September 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 145.505 | R 291.01 |
| 10 - 28 | R 141.865 | R 283.73 |
| 30 - 88 | R 137.61 | R 275.22 |
| 90 - 178 | R 132.105 | R 264.21 |
| 180 + | R 126.82 | R 253.64 |
*price indicative
- RS stock no.:
- 917-1463
- Distrelec Article No.:
- 304-44-490
- Mfr. Part No.:
- IXTH34N65X2
- Manufacturer:
- IXYS
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 34A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | X2-Class | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 96mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.4V | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 540W | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.3mm | |
| Width | 21.45mm | |
| Length | 16.24mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 34A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series X2-Class | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 96mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.4V | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 540W | ||
Maximum Operating Temperature 150°C | ||
Height 5.3mm | ||
Width 21.45mm | ||
Length 16.24mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS X2-Class Series
The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge)
Intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
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- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
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