IXYS X2-Class Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-247 IXTH34N65X2

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Subtotal (1 pack of 2 units)*

R 296,73

(exc. VAT)

R 341,24

(inc. VAT)

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  • 324 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 8R 148.365R 296.73
10 - 28R 144.655R 289.31
30 - 88R 140.315R 280.63
90 - 178R 134.70R 269.40
180 +R 129.31R 258.62

*price indicative

Packaging Options:
RS stock no.:
917-1463
Distrelec Article No.:
304-44-490
Mfr. Part No.:
IXTH34N65X2
Manufacturer:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

34A

Maximum Drain Source Voltage Vds

650V

Series

X2-Class

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

96mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

54nC

Maximum Power Dissipation Pd

540W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.4V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

16.24mm

Height

5.3mm

Automotive Standard

No

N-channel Power MOSFET, IXYS X2-Class Series


The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.

Very low RDS(on) and QG (gate charge)

Intrinsic rectifier diode

Low intrinsic gate resistance

Low package inductance

Industry standard packages

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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