IXYS X2-Class Type N-Channel MOSFET, 54 A, 650 V Enhancement, 3-Pin ISOPLUS247 IXTR102N65X2
- RS stock no.:
- 917-1432
- Distrelec Article No.:
- 302-53-433
- Mfr. Part No.:
- IXTR102N65X2
- Manufacturer:
- IXYS
Image representative of range
Bulk discount available
Subtotal (1 unit)*
R 310,67
(exc. VAT)
R 357,27
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 16 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | R 310.67 |
| 5 - 9 | R 302.90 |
| 10 - 29 | R 293.81 |
| 30 - 89 | R 282.06 |
| 90 + | R 270.78 |
*price indicative
- RS stock no.:
- 917-1432
- Distrelec Article No.:
- 302-53-433
- Mfr. Part No.:
- IXTR102N65X2
- Manufacturer:
- IXYS
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 54A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | ISOPLUS247 | |
| Series | X2-Class | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.4V | |
| Typical Gate Charge Qg @ Vgs | 152nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 330W | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.21mm | |
| Length | 16.13mm | |
| Standards/Approvals | No | |
| Width | 21.34 mm | |
| Distrelec Product Id | 30253433 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 54A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type ISOPLUS247 | ||
Series X2-Class | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.4V | ||
Typical Gate Charge Qg @ Vgs 152nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 330W | ||
Maximum Operating Temperature 150°C | ||
Height 5.21mm | ||
Length 16.13mm | ||
Standards/Approvals No | ||
Width 21.34 mm | ||
Distrelec Product Id 30253433 | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS X2-Class Series
The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge)
Intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin ISOPLUS247
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- IXYS X2-Class Type N-Channel Power MOSFET 650 V Enhancement, 3-Pin TO-264P
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-264
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247