N-Channel MOSFET, 130 A, 100 V, 3-Pin TO-220AB Infineon IRFB4310PBF

RS stock no.:: 913-3979
Mfr. Part No.:: IRFB4310PBF
Manufacturer:: Infineon

N-Channel MOSFET, 130 A, 100 V, 3-Pin TO-220AB Infineon IRFB4310PBF

Bulk discount available

Subtotal (1 tube of 50 units)**

R 2 076 90

(exc. VAT)

R 2 388 45

(inc. VAT)

200 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over R 1500

Not Available for premium delivery

Units	Per unit	Per Tube**
50 - 50	R 41,538	R 2 076,90
100 - 150	R 40,499	R 2 024,95
200 - 450	R 39,284	R 1 964,20
500 - 950	R 37,713	R 1 885,65
1000 +	R 36,204	R 1 810,20

**price indicative

RS stock no.:: 913-3979
Mfr. Part No.:: IRFB4310PBF
Manufacturer:: Infineon

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

Motor Control MOSFET

Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.

Synchronous Rectifier MOSFET

A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.

Infineon HEXFET Series MOSFET, 130A Maximum Continuous Drain Current, 300W Maximum Power Dissipation - IRFB4310PBF

This robust and efficient power transistor is designed for high-performance applications in automation, electronics, and the electrical industry. The N-channel technology provides advantages in power management and switching capabilities. Its operating temperature range of -55°C to +175°C enhances its versatility and reliability across various environments.

Features & Benefits

• Supports up to 130A continuous drain current for substantial load demands
• Operates with a maximum voltage of 100 V for improved utility
• Low RDS(on) of 7 mΩ minimises power loss
• Features enhancement mode operation to enhance efficiency
• Integrated ruggedness with avalanche and dynamic dV/dt capabilities
• Fully characterised capacitance for precise performance optimisation

Applications

• Utilised in high-efficiency synchronous rectification systems
• Employed within uninterruptible power supplies for dependable energy backup
• Suitable for high-speed power switching circuits
• Designed for hard-switched and high-frequency

How does the low RDS(on) impact efficiency?

The low RDS(on) reduces heat generation during operation, leading to enhanced power delivery efficiency.

What is the significance of avalanche capability?

Avalanche capability protects the device from excessive voltage spikes, promoting stable performance under challenging conditions.

Can this device be used in high-frequency applications?

Yes, this MOSFET is designed for high-frequency circuits, making it suitable for various advanced applications.

What is the maximum current it can handle at elevated temperatures?

At a case temperature of 100°C, the maximum continuous drain current can reach 92 A, ensuring dependable performance.

How should it be mounted for optimal performance?

It is recommended to mount the device on a flat greased surface to maximise thermal transfer to the heatsink.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	130 A
Maximum Drain Source Voltage	100 V
Series	HEXFET
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	7 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	300 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	4.82mm
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Transistor Material	Si
Length	10.66mm
Typical Gate Charge @ Vgs	170 nC @ 10 V
Height	9.02mm
Minimum Operating Temperature	-55 °C