Infineon HEXFET Type N-Channel MOSFET, 130 A, 100 V Enhancement, 3-Pin TO-220 IRFB4310PBF

RS stock no.:: 650-4744
Mfr. Part No.:: IRFB4310PBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 130 A, 100 V Enhancement, 3-Pin TO-220 IRFB4310PBF

Image representative of range

Bulk discount available

Subtotal (1 unit)*

R 53,95

(exc. VAT)

R 62,04

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

2 unit(s) ready to ship from another location
Plus 175 unit(s) shipping from 01 January 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit
1 - 24	R 53.95
25 - 99	R 52.60
100 - 249	R 51.02
250 - 499	R 48.98
500 +	R 47.02

*price indicative

RS stock no.:: 650-4744
Mfr. Part No.:: IRFB4310PBF
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	130A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	7mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	170nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	300W
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Length	10.66mm
	Standards/Approvals	No
	Height	9.02mm
	Width	4.82 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 130A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 7mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 170nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 300W
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Length 10.66mm
	Standards/Approvals No
	Height 9.02mm
	Width 4.82 mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 130A Maximum Continuous Drain Current, 300W Maximum Power Dissipation - IRFB4310PBF

This robust and efficient power transistor is designed for high-performance applications in automation, electronics, and the electrical industry. The N-channel technology provides advantages in power management and switching capabilities. Its operating temperature range of -55°C to +175°C enhances its versatility and reliability across various environments.

Features & Benefits

• Supports up to 130A continuous drain current for substantial load demands

• Operates with a maximum voltage of 100 V for improved utility

• Low RDS(on) of 7 mΩ minimises power loss

• Features enhancement mode operation to enhance efficiency

• Integrated ruggedness with avalanche and dynamic dV/dt capabilities

• Fully characterised capacitance for precise performance optimisation

Applications

• Utilised in high-efficiency synchronous rectification systems

• Employed within uninterruptible power supplies for dependable energy backup

• Suitable for high-speed power switching circuits

• Designed for hard-switched and high-frequency

How does the low RDS(on) impact efficiency?

The low RDS(on) reduces heat generation during operation, leading to enhanced power delivery efficiency.

What is the significance of avalanche capability?

Avalanche capability protects the device from excessive voltage spikes, promoting stable performance under challenging conditions.

Can this device be used in high-frequency applications?

Yes, this MOSFET is designed for high-frequency circuits, making it suitable for various advanced applications.

What is the maximum current it can handle at elevated temperatures?

At a case temperature of 100°C, the maximum continuous drain current can reach 92 A, ensuring dependable performance.

How should it be mounted for optimal performance?

It is recommended to mount the device on a flat greased surface to maximise thermal transfer to the heatsink.