Infineon OptiMOS 3 Type N-Channel MOSFET, 130 A, 150 V Enhancement, 7-Pin TO-263 IPB065N15N3GATMA1

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Subtotal (1 pack of 2 units)*

R 155,51

(exc. VAT)

R 178,836

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 77.755R 155.51
10 - 48R 75.81R 151.62
50 - 98R 73.535R 147.07
100 - 248R 70.595R 141.19
250 +R 67.77R 135.54

*price indicative

Packaging Options:
RS stock no.:
906-4283
Mfr. Part No.:
IPB065N15N3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

130A

Maximum Drain Source Voltage Vds

150V

Series

OptiMOS 3

Package Type

TO-263

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

6.8mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

70nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

300W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10.31mm

Width

4.57 mm

Height

9.45mm

Automotive Standard

No

Exempt

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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