Infineon OptiMOS 5 Type N-Channel MOSFET, 90 A, 60 V Enhancement, 3-Pin TO-252 IPD025N06NATMA1
- RS stock no.:
- 906-4485
- Mfr. Part No.:
- IPD025N06NATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 4 units)*
R 146,192
(exc. VAT)
R 168,12
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 6,172 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 4 - 4 | R 36.548 | R 146.19 |
| 8 - 36 | R 35.635 | R 142.54 |
| 40 - 76 | R 34.565 | R 138.26 |
| 80 - 196 | R 33.183 | R 132.73 |
| 200 + | R 31.855 | R 127.42 |
*price indicative
- RS stock no.:
- 906-4485
- Mfr. Part No.:
- IPD025N06NATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.8mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 71nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 167W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Height | 2.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.8mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 71nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 167W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Height 2.41mm | ||
Automotive Standard No | ||
Exempt
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 IPD053N06NATMA1
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V Enhancement, 3-Pin PG-TO-220 FullPAK
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220 IPP020N06NAKSA1
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V Enhancement, 3-Pin PG-TO-220 FullPAK IPA029N06NM5SXKSA1
- Infineon OptiMOS 5 Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220