Infineon OptiMOS 3 Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-263 IPB083N10N3GATMA1

Image representative of range

Bulk discount available

Subtotal (1 pack of 8 units)*

R 336,288

(exc. VAT)

R 386,728

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later
Units
Per unit
Per Pack*
8 - 72R 42.036R 336.29
80 - 392R 40.985R 327.88
400 - 792R 39.755R 318.04
800 - 1992R 38.165R 305.32
2000 +R 36.639R 293.11

*price indicative

Packaging Options:
RS stock no.:
897-7361
Mfr. Part No.:
IPB083N10N3GATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

OptiMOS 3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

15.1mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

125W

Typical Gate Charge Qg @ Vgs

42nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Height

4.57mm

Length

10.31mm

Standards/Approvals

No

Automotive Standard

No

Not Applicable

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Related links