Infineon OptiMOS 3 Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-263 IPB083N10N3GATMA1
- RS stock no.:
- 897-7361
- Mfr. Part No.:
- IPB083N10N3GATMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 8 units)*
R 250,312
(exc. VAT)
R 287,856
(inc. VAT)
FREE delivery for orders over R 1,500.00
Stock information currently inaccessible
Units | Per unit | Per Pack* |
|---|---|---|
| 8 - 72 | R 31.289 | R 250.31 |
| 80 - 392 | R 30.506 | R 244.05 |
| 400 - 792 | R 29.591 | R 236.73 |
| 800 - 1992 | R 28.408 | R 227.26 |
| 2000 + | R 27.271 | R 218.17 |
*price indicative
- RS stock no.:
- 897-7361
- Mfr. Part No.:
- IPB083N10N3GATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | OptiMOS 3 | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 15.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 125W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 9.45 mm | |
| Height | 4.57mm | |
| Length | 10.31mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series OptiMOS 3 | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 15.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 125W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 9.45 mm | ||
Height 4.57mm | ||
Length 10.31mm | ||
Automotive Standard No | ||
Not Applicable
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
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