Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 80 A, 100 V Enhancement, 3-Pin TO-263 IPB065N10N3GATMA1

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Subtotal (1 pack of 5 units)*

R 268,47

(exc. VAT)

R 308,74

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 5R 53.694R 268.47
10 - 95R 52.352R 261.76
100 - 245R 50.782R 253.91
250 - 495R 48.75R 243.75
500 +R 46.80R 234.00

*price indicative

Packaging Options:
RS stock no.:
220-7383
Mfr. Part No.:
IPB065N10N3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET & Diode

Channel Type

Type N

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

OptiMOS 3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

6.5mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon 100V OptiMOS power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and figure of merit.

Excellent switching performance

World’s lowest R DS(on)

Very low Q g and Q gd

Excellent gate charge x R DS(on) product (FOM)

Environmentally friendly

Increased efficiency

Highest power density

Less paralleling required

Smallest board-space consumption

Easy-to-design products

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