Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 80 A, 100 V Enhancement, 3-Pin TO-263 IPB065N10N3GATMA1
- RS stock no.:
- 220-7383
- Mfr. Part No.:
- IPB065N10N3GATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 5 units)*
R 231,61
(exc. VAT)
R 266,35
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 865 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 46.322 | R 231.61 |
| 10 - 95 | R 45.164 | R 225.82 |
| 100 - 245 | R 43.81 | R 219.05 |
| 250 - 495 | R 42.058 | R 210.29 |
| 500 + | R 40.376 | R 201.88 |
*price indicative
- RS stock no.:
- 220-7383
- Mfr. Part No.:
- IPB065N10N3GATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | OptiMOS 3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.5mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series OptiMOS 3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.5mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 100V OptiMOS power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and figure of merit.
Excellent switching performance
World’s lowest R DS(on)
Very low Q g and Q gd
Excellent gate charge x R DS(on) product (FOM)
Environmentally friendly
Increased efficiency
Highest power density
Less paralleling required
Smallest board-space consumption
Easy-to-design products
Related links
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