Infineon OptiMOS 3 Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

R 35 600,00

(exc. VAT)

R 40 950,00

(inc. VAT)

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In Stock
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Units
Per unit
Per Reel*
2500 - 2500R 14.24R 35,600.00
5000 - 5000R 13.884R 34,710.00
7500 +R 13.467R 33,667.50

*price indicative

RS stock no.:
214-9027
Mfr. Part No.:
IPD082N10N3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

100V

Series

OptiMOS 3

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

8.2mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

125W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

42nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Length

6.73mm

Standards/Approvals

No

Width

6.22 mm

Height

2.41mm

Automotive Standard

No

The Infineon 100V OptiMOS power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). Ideal for high-frequency switching and synchronous rectification. Potential Applications includes Class D audio amplifiers, Isolated DC-DC converters etc.

It has 175 °C operating temperature

Qualified according to JEDEC for target applications

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