Infineon OptiMOS 3 Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-252 IPD082N10N3GATMA1
- RS stock no.:
- 214-9029
- Mfr. Part No.:
- IPD082N10N3GATMA1
- Manufacturer:
- Infineon
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Subtotal (1 pack of 10 units)*
R 204,78
(exc. VAT)
R 235,50
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 30 unit(s) ready to ship from another location
- Plus 4,580 unit(s) shipping from 18 February 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | R 20.478 | R 204.78 |
| 20 - 90 | R 19.966 | R 199.66 |
| 100 - 240 | R 19.367 | R 193.67 |
| 250 - 490 | R 18.592 | R 185.92 |
| 500 + | R 17.848 | R 178.48 |
*price indicative
- RS stock no.:
- 214-9029
- Mfr. Part No.:
- IPD082N10N3GATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | OptiMOS 3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 125W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.22 mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Height | 2.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series OptiMOS 3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.2mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 125W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 6.22 mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Height 2.41mm | ||
Automotive Standard No | ||
The Infineon 100V OptiMOS power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). Ideal for high-frequency switching and synchronous rectification. Potential Applications includes Class D audio amplifiers, Isolated DC-DC converters etc.
It has 175 °C operating temperature
Qualified according to JEDEC for target applications
Related links
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- Infineon OptiMOS 3 Type N-Channel MOSFET & Diode 100 V Enhancement, 3-Pin TO-263 IPB065N10N3GATMA1
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