N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220SIS Toshiba TK10A80E,S4X(S
- RS stock no.:
- 896-2647
- Mfr. Part No.:
- TK10A80E,S4X(S
- Manufacturer:
- Toshiba
40 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
80 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
Not Available for premium delivery
Added
Price (Excl VAT) Each (In a Pack of 5)
R 23,556
(exc. VAT)
R 27,089
(inc. VAT)
| Units | Per unit | Per Pack* |
| 5 - 20 | R 23,556 | R 117,78 |
| 25 - 45 | R 22,968 | R 114,84 |
| 50 - 95 | R 22,278 | R 111,39 |
| 100 - 245 | R 21,386 | R 106,93 |
| 250 + | R 20,53 | R 102,65 |
| *price indicative | ||
- RS stock no.:
- 896-2647
- Mfr. Part No.:
- TK10A80E,S4X(S
- Manufacturer:
- Toshiba
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
MOSFET Transistors, Toshiba
Specification
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 10 A |
| Maximum Drain Source Voltage | 800 V |
| Series | TK |
| Package Type | TO-220SIS |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 1 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Power Dissipation | 50 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Width | 4.5mm |
| Typical Gate Charge @ Vgs | 46 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Length | 10mm |
| Height | 15mm |
- RS stock no.:
- 896-2647
- Mfr. Part No.:
- TK10A80E,S4X(S
- Manufacturer:
- Toshiba