Toshiba TK Type N-Channel MOSFET, 30 A, 60 V Enhancement, 3-Pin TO-220 TK30A06N1,S4X(S
- RS stock no.:
- 168-7967
- Mfr. Part No.:
- TK30A06N1,S4X(S
- Manufacturer:
- Toshiba
Image representative of range
Bulk discount available
Subtotal (1 tube of 50 units)*
R 513,65
(exc. VAT)
R 590,70
(inc. VAT)
Add 150 units to get free delivery
In Stock
- 100 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | R 10.273 | R 513.65 |
| 100 - 200 | R 10.016 | R 500.80 |
| 250 - 450 | R 9.716 | R 485.80 |
| 500 - 950 | R 9.327 | R 466.35 |
| 1000 + | R 8.954 | R 447.70 |
*price indicative
- RS stock no.:
- 168-7967
- Mfr. Part No.:
- TK30A06N1,S4X(S
- Manufacturer:
- Toshiba
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TK | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 15mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 25W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10mm | |
| Height | 15mm | |
| Width | 4.5 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TK | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 15mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 25W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10mm | ||
Height 15mm | ||
Width 4.5 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
MOSFET N-Channel, TK3x Series, Toshiba
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Related links
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