N-Channel MOSFET Transistor, 207 A, 100 V, 3-Pin TO-220SIS Toshiba TK100A10N1,S4X(S

RS stock no.:: 891-2866
Mfr. Part No.:: TK100A10N1,S4X(S
Manufacturer:: Toshiba

24 Available in 4–6 working days for collection on site or delivery to major cities(Delivery Terms & Conditions Apply) EU stock

6 Available in 4–6 working days for collection on site or delivery to major cities(Delivery Terms & Conditions Apply) EU stock

Added

Price (Excl VAT) Each (In a Pack of 2)

R 45.29

(exc. VAT)

R 52.08

(inc. VAT)

units	Per unit	Per Pack*
2 - 8	R 45.29	R 90.58
10 - 18	R 44.385	R 88.77
20 - 48	R 43.055	R 86.11
50 - 98	R 41.335	R 82.67
100 +	R 39.68	R 79.36
*price indicative

RS stock no.:: 891-2866
Mfr. Part No.:: TK100A10N1,S4X(S
Manufacturer:: Toshiba

COO (Country of Origin):: CN

Technical data sheets

Schematic Symbol & PCB Footprint

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Specification

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	207 A
Maximum Drain Source Voltage	100 V
Package Type	TO-220SIS
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	3.8 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Maximum Power Dissipation	45 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	4.5mm
Typical Gate Charge @ Vgs	140 nC @ 10 V
Length	10mm
Transistor Material	Si
Series	TK
Forward Diode Voltage	1.2V
Height	15mm