DiodesZetex ZXMN3A01Z Type N-Channel MOSFET, 3.3 A, 30 V Enhancement, 3-Pin SOT-89 ZXMN3A01ZTA
- RS stock no.:
- 885-5687
- Mfr. Part No.:
- ZXMN3A01ZTA
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 171,95
(exc. VAT)
R 197,75
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 1,450 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | R 6.878 | R 171.95 |
| 125 - 225 | R 6.706 | R 167.65 |
| 250 - 975 | R 6.504 | R 162.60 |
| 1000 - 1975 | R 6.244 | R 156.10 |
| 2000 + | R 5.995 | R 149.88 |
*price indicative
- RS stock no.:
- 885-5687
- Mfr. Part No.:
- ZXMN3A01ZTA
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-89 | |
| Series | ZXMN3A01Z | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 5nC | |
| Forward Voltage Vf | 0.95V | |
| Maximum Power Dissipation Pd | 2.12W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 4.6mm | |
| Standards/Approvals | No | |
| Height | 1.6mm | |
| Width | 2.6 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-89 | ||
Series ZXMN3A01Z | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 5nC | ||
Forward Voltage Vf 0.95V | ||
Maximum Power Dissipation Pd 2.12W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 4.6mm | ||
Standards/Approvals No | ||
Height 1.6mm | ||
Width 2.6 mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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