DiodesZetex ZXMN10A07Z Type N-Channel MOSFET, 1.4 A, 100 V Enhancement, 3-Pin SOT-89 ZXMN10A07ZTA
- RS stock no.:
- 669-7401
- Mfr. Part No.:
- ZXMN10A07ZTA
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
R 115,43
(exc. VAT)
R 132,74
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 10 unit(s) ready to ship from another location
- Plus 160 unit(s) shipping from 20 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 11.543 | R 115.43 |
| 50 - 190 | R 11.254 | R 112.54 |
| 200 - 490 | R 10.916 | R 109.16 |
| 500 - 990 | R 10.479 | R 104.79 |
| 1000 + | R 10.06 | R 100.60 |
*price indicative
- RS stock no.:
- 669-7401
- Mfr. Part No.:
- ZXMN10A07ZTA
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.4A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-89 | |
| Series | ZXMN10A07Z | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 700mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.95V | |
| Maximum Power Dissipation Pd | 2.6W | |
| Typical Gate Charge Qg @ Vgs | 2.9nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 4.6mm | |
| Standards/Approvals | No | |
| Height | 1.6mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.4A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-89 | ||
Series ZXMN10A07Z | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 700mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.95V | ||
Maximum Power Dissipation Pd 2.6W | ||
Typical Gate Charge Qg @ Vgs 2.9nC | ||
Maximum Operating Temperature 150°C | ||
Length 4.6mm | ||
Standards/Approvals No | ||
Height 1.6mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Related links
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