DiodesZetex ZXMN6A11Z Type N-Channel MOSFET, 3.6 A, 60 V Enhancement, 3-Pin SOT-89
- RS stock no.:
- 122-0596
- Mfr. Part No.:
- ZXMN6A11ZTA
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 reel of 1000 units)*
R 6 234,00
(exc. VAT)
R 7 169,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 13 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | R 6.234 | R 6,234.00 |
| 2000 - 3000 | R 6.078 | R 6,078.00 |
| 4000 - 9000 | R 5.895 | R 5,895.00 |
| 10000 - 19000 | R 5.66 | R 5,660.00 |
| 20000 + | R 5.433 | R 5,433.00 |
*price indicative
- RS stock no.:
- 122-0596
- Mfr. Part No.:
- ZXMN6A11ZTA
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.6A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-89 | |
| Series | ZXMN6A11Z | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 5.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.6W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.85V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 4.6mm | |
| Height | 1.6mm | |
| Width | 2.6 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.6A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-89 | ||
Series ZXMN6A11Z | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 5.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.6W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.85V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 4.6mm | ||
Height 1.6mm | ||
Width 2.6 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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