DiodesZetex ZXMN6A11Z N-Channel MOSFET, 3.6 A, 60 V Enhancement, 3-Pin SOT-89 ZXMN6A11ZTA
- RS stock no.:
- 122-0596
- Mfr. Part No.:
- ZXMN6A11ZTA
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 1000 units)*
R 5 965,00
(exc. VAT)
R 6 860,00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | R 5.965 | R 5,965.00 |
| 2000 - 3000 | R 5.816 | R 5,816.00 |
| 4000 - 9000 | R 5.642 | R 5,642.00 |
| 10000 - 19000 | R 5.416 | R 5,416.00 |
| 20000 + | R 5.199 | R 5,199.00 |
*price indicative
- RS stock no.:
- 122-0596
- Mfr. Part No.:
- ZXMN6A11ZTA
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.6A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-89 | |
| Series | ZXMN6A11Z | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 850mV | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Typical Gate Charge Qg @ Vgs | 5.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.6W | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.6mm | |
| Standards/Approvals | No | |
| Length | 4.6mm | |
| Height | 1.6mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.6A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-89 | ||
Series ZXMN6A11Z | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 850mV | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Typical Gate Charge Qg @ Vgs 5.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.6W | ||
Maximum Operating Temperature 150°C | ||
Width 2.6mm | ||
Standards/Approvals No | ||
Length 4.6mm | ||
Height 1.6mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Related links
- DiodesZetex ZXMN6A11Z N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-89 ZXMN6A11ZTA
- DiodesZetex DMG3406L N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 DMG3406L-13
- DiodesZetex ZXMN10A07Z N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-89 ZXMN10A07ZTA
- DiodesZetex ZVN4525Z N-Channel MOSFET 250 V Enhancement, 3-Pin SOT-89 ZVN4525ZTA
- DiodesZetex ZXMN6A07Z N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-89 ZXMN6A07ZTA
- DiodesZetex ZXMN3A01Z N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-89 ZXMN3A01ZTA
- Infineon HEXFET N-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23
- onsemi NTR3C21NZ N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 NTR3C21NZT1G