N-Channel MOSFET, 9.7 A, 100 V, 3-Pin D2PAK Infineon IRF520NSTRLPBF

RS stock no.:: 831-2821
Mfr. Part No.:: IRF520NSTRLPBF
Manufacturer:: Infineon

N-Channel MOSFET, 9.7 A, 100 V, 3-Pin D2PAK Infineon IRF520NSTRLPBF

Image representative of range

Bulk discount available

Subtotal (1 pack of 5 units)**

R 79 12

(exc. VAT)

R 90 99

(inc. VAT)

Temporarily out of stock - back order for despatch when stock is available*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over R 1500

Units	Per unit	Per Pack**
5 - 95	R 15,824	R 79,12
100 - 195	R 15,428	R 77,14
200 - 395	R 14,966	R 74,83
400 - 795	R 14,368	R 71,84
800 +	R 13,794	R 68,97

**price indicative

RS stock no.:: 831-2821
Mfr. Part No.:: IRF520NSTRLPBF
Manufacturer:: Infineon

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 9.7A Maximum Continuous Drain Current, 48W Maximum Power Dissipation - IRF520NSTRLPBF

This MOSFET is designed for efficient switching and amplification across various applications. Its high power handling capacity offers versatility in the fields of automation and electronics. With advanced process technology, this device ensures performance and reliability, making it suitable for operational environments. The characteristics of this MOSFET enhance circuit performance significantly.

Features & Benefits

• Low on-resistance contributes to improved energy efficiency
• High drain current rating of 9.7A supports robust performance
• Maximum drain-source voltage of 100V provides application flexibility
• Enhancement mode enables effective switching capabilities
• Surface mount design allows for compact PCB layouts

Applications

• Employed in power management systems for energy conversion
• Suitable for automation controls requiring rapid switching
• Applied in motor control circuits for precision
• Utilised in renewable energy systems such as solar inverters
• Used in audio amplifiers to enhance sound quality

What type of mounting is suitable for this device?

This component features a surface mount design, making it compatible with automated PCB assembly processes and ideal for high-density layouts.

Can it manage high temperatures during operation?

Yes, it has a maximum operating temperature of +175°C, making it apt for harsh environments without compromising performance.

Is this suitable for applications requiring fast switching?

Yes, its rapid switching speed enhances performance in applications like PWM and DC-DC converters.

What is the inductance characteristic of this device?

The internal drain inductance is typically 4.5nH, contributing to its responsive operation.

How is power dissipation handled in this MOSFET?

It allows for a maximum power dissipation of 48W, ensuring thermal stability and effective performance in various circuits.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Manufacturer	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	9.7 A
	Maximum Drain Source Voltage	100 V
	Package Type	D2PAK (TO-263)
	Series	HEXFET
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	200 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	48 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Typical Gate Charge @ Vgs	25 nC @ 10 V
	Maximum Operating Temperature	+175 °C
	Length	10.67mm
	Number of Elements per Chip	1
	Transistor Material	Si
	Width	9.65mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.3V
	Height	4.83mm

	Select all
	Manufacturer Infineon
	Channel Type N
	Maximum Continuous Drain Current 9.7 A
	Maximum Drain Source Voltage 100 V
	Package Type D2PAK (TO-263)
	Series HEXFET
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 200 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 48 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Typical Gate Charge @ Vgs 25 nC @ 10 V
	Maximum Operating Temperature +175 °C
	Length 10.67mm
	Number of Elements per Chip 1
	Transistor Material Si
	Width 9.65mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.3V
	Height 4.83mm