Infineon HEXFET Type N-Channel MOSFET, 42 A, 100 V Enhancement, 3-Pin TO-263

RS stock no.:: 215-2571
Mfr. Part No.:: IRF1310NSTRLPBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 42 A, 100 V Enhancement, 3-Pin TO-263

Image representative of range

Bulk discount available

Subtotal (1 reel of 800 units)*

R 13 163,20

(exc. VAT)

R 15 137,60

(inc. VAT)

FREE delivery for orders over R 1,500.00

Temporarily out of stock

3,200 unit(s) shipping from 29 December 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
800 - 800	R 16.454	R 13,163.20
1600 - 1600	R 16.042	R 12,833.60
2400 +	R 15.561	R 12,448.80

*price indicative

RS stock no.:: 215-2571
Mfr. Part No.:: IRF1310NSTRLPBF
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	42A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-263
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	36mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	160W
	Typical Gate Charge Qg @ Vgs	110nC
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	EIA 418
	Width	1.079 in
	Height	1.197in
	Length	14.173in
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 42A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-263
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 36mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 160W
	Typical Gate Charge Qg @ Vgs 110nC
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Standards/Approvals EIA 418
	Width 1.079 in
	Height 1.197in
	Length 14.173in
	Automotive Standard No

Datasheet - IRF1310NSTRLPBF

The Infineon series fifth generation HEXFET from International rectifier utilize advanced processing techniques to achieve extremely low on resistance for Silicon area. This benefits, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, providing sufficient level device for, provides designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2pack is a surface mount power package capable of accommodating die sizes upto HEX-4. It provide the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2pack is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.

Advanced Process Technology

Fully avalanche rated

Fast switching

Infineon HEXFET Type N-Channel MOSFET, 42 A, 100 V Enhancement, 3-Pin TO-263

FREE delivery for orders over R 1,500.00

Related links