Infineon HEXFET Type N-Channel MOSFET, 97 A, 100 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 800 units)*

R 19 432,80

(exc. VAT)

R 22 348,00

(inc. VAT)

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Units
Per unit
Per Reel*
800 +R 24.291R 19,432.80

*price indicative

RS stock no.:
145-8932
Mfr. Part No.:
IRFS4410ZTRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

97A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

9mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

83nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

230W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Width

11.3 mm

Standards/Approvals

No

Length

10.67mm

Height

4.83mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel Power MOSFET 100V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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