N-Channel MOSFET, 89 A, 75 V, 3-Pin D2PAK Infineon IRF2807ZSTRLPBF

RS stock no.:: 831-2806
Mfr. Part No.:: IRF2807ZSTRLPBF
Manufacturer:: Infineon

N-Channel MOSFET, 89 A, 75 V, 3-Pin D2PAK Infineon IRF2807ZSTRLPBF

Image representative of range

Bulk discount available

Price (Excl VAT) Each (In a Pack of 10)

R 36,064

(exc. VAT)

R 41,474

(inc. VAT)

440 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over R 1500

Not Available for premium delivery

Units	Per unit	Per Pack**
10 - 90	R 36,064	R 360,64
100 - 190	R 35,162	R 351,62
200 - 390	R 34,107	R 341,07
400 - 790	R 32,743	R 327,43
800 +	R 31,433	R 314,33

**price indicative

RS stock no.:: 831-2806
Mfr. Part No.:: IRF2807ZSTRLPBF
Manufacturer:: Infineon

IRF2807ZPbF, IRF2807ZSPbF, IRF2807ZLPbF,HEXFET Power MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	89 A
Maximum Drain Source Voltage	75 V
Package Type	D2PAK (TO-263)
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	9.4 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	170 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Length	10.67mm
Typical Gate Charge @ Vgs	71 nC @ 10 V
Width	9.65mm
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	4.83mm

N-Channel MOSFET, 89 A, 75 V, 3-Pin D2PAK Infineon IRF2807ZSTRLPBF

FREE delivery for orders over R 1500

N-Channel Power MOSFET 60V to 80V, Infineon

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