Infineon HEXFET Type N-Channel Power MOSFET, 355 A, 75 V Enhancement, 3-Pin TO-247 IRFP7718PBF
- RS stock no.:
- 879-3325
- Mfr. Part No.:
- IRFP7718PBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 235,45
(exc. VAT)
R 270,768
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | R 117.725 | R 235.45 |
| 50 - 118 | R 114.78 | R 229.56 |
| 120 - 248 | R 111.335 | R 222.67 |
| 250 - 498 | R 106.88 | R 213.76 |
| 500 + | R 102.605 | R 205.21 |
*price indicative
- RS stock no.:
- 879-3325
- Mfr. Part No.:
- IRFP7718PBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 355A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-247 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.8mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 552nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 517W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Lead-Free, RoHS | |
| Width | 5.31mm | |
| Length | 15.87mm | |
| Height | 20.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 355A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-247 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.8mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 552nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 517W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Lead-Free, RoHS | ||
Width 5.31mm | ||
Length 15.87mm | ||
Height 20.7mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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